In situ phosphorus-doped Ge1−x Sn x layers grown using low-temperature metal-organic chemical vapor deposition.

MLA

Shinichi Ike, et al. “In Situ Phosphorus-Doped Ge1−x Sn x Layers Grown Using Low-Temperature Metal-Organic Chemical Vapor Deposition.” Semiconductor Science & Technology, vol. 32, no. 12, Dec. 2017, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6641/aa90d2.

APA

Shinichi Ike, Wakana Takeuchi, Osamu Nakatsuka, & Shigeaki Zaima. (2017). In situ phosphorus-doped Ge1−x Sn x layers grown using low-temperature metal-organic chemical vapor deposition. Semiconductor Science & Technology, 32(12), 1. https://doi.org/10.1088/1361-6641/aa90d2

Chicago

Shinichi Ike, Wakana Takeuchi, Osamu Nakatsuka, and Shigeaki Zaima. 2017. “In Situ Phosphorus-Doped Ge1−x Sn x Layers Grown Using Low-Temperature Metal-Organic Chemical Vapor Deposition.” Semiconductor Science & Technology 32 (12): 1. doi:10.1088/1361-6641/aa90d2.