The influence of Sn-doping on the microstructure and electrical properties of BNT-BLZT ceramics.

[(Bi1/2Na1/2)0.92Ba0.05La0.02][SnxZr(0.95-x)Ti0.05]O3(BNT-BLSZT, x = 0, 0.03, 0.06, 0.09) lead-free ferroelectric ceramics synthesized by a conventional solid-state reaction method exhibit high crystallinity and high density at 1150°C. The microstructure and the electrical properties of BNT-BLSZT were investigated. The X-ray diffraction patterns reveal that the BNT-BLSZT ceramic is constituted by a single perovskite structure phase. The average grain size of the ceramic samples slightly increases with increasing Sn content, TheP-Ehysteresis loops of BNT-BLZST ceramics at 50 kV/cm indicate that both the saturation polarization (Ps) and the remnant polarization (Pr) decrease with increasing Sn-doping. It shows that Sn-doping is useful to improve energy storage density of the ceramics. These properties indicate that BNT-BLZST ceramics are a promising lead-free anti-ferroelectric material for applications in energy-storage capacitors. [ABSTRACT FROM PUBLISHER]