A High-Temperature Gate Driver for Silicon Carbide <sc>mosfet</sc>.

SiC MOSFET can operate at a junction temperature of 200–250  ^\circ C due to its improved material properties and thermal stability. However, successful realization of SiC <sc>MOSFET</sc> based high-temperature (HT) converter requires HT gate drivers. This paper presents a low-cost HT gate driver developed with discrete transistors and signal diodes rated at 180–200 ^\circ C. The gate driver has a robust overcurrent and undervoltage lock out protection circuit. The propagation delay of the protection circuit and gate driving circuit is greatly reduced compared to commercial HT gate drivers. A comparative analysis of the developed HT gate driver using discrete components and the commercially available silicon-on-insulator technology based HT gate driver is presented. The performance of the HT gate driver is evaluated for both hard switched fault and fault under load condition at an ambient temperature of 180  ^\circ C. [ABSTRACT FROM PUBLISHER]