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The microstructure, energy storage and dielectric behaviours of (Ti,Zn)-doped Bi 0.97 Nd 0.03 FeO 3 thin films.
- Source :
-
Materials Technology . Jan2018, Vol. 33 Issue 1, p10-15. 6p. - Publication Year :
- 2018
-
Abstract
- (Ti, Zn)-co-doped Bi0.97Nd0.03FeO3(BNFTZ) thin films with different thicknesses were prepared directly on indium tin oxide/glass substrates deriving from the precursor solutions with different solution concentrations. The X-ray diffraction, scanning electron microscopy and insulating/ferroelectric/dielectric measurements were utilised to characterise the BNFTZ thin films. Both BNFTZ thin films with the thicknesses of 160 and 320 nm are crystallised into phase-pure perovskite structure without second phase. Compared to the film of 160 nm, a lower leakage current can be obtained in BNFTZ film of 320 nm due to due to its denser microstructure with smaller grain size. The film with 320 nm thickness possesses a high energy-storage efficiency of 87%, which can be ascribed to the slimP–Eloop. At 100 kHz, the film of 320 nm owns lower dielectric constant (~91) and dissipation factor (~0.10). The possible contributions are discussed to explain the difference in the related performances for BNFTZ thin films with different thicknesses. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10667857
- Volume :
- 33
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Materials Technology
- Publication Type :
- Academic Journal
- Accession number :
- 126975163
- Full Text :
- https://doi.org/10.1080/10667857.2017.1370816