The microstructure, energy storage and dielectric behaviours of (Ti,Zn)-doped Bi 0.97 Nd 0.03 FeO 3 thin films.

(Ti, Zn)-co-doped Bi0.97Nd0.03FeO3(BNFTZ) thin films with different thicknesses were prepared directly on indium tin oxide/glass substrates deriving from the precursor solutions with different solution concentrations. The X-ray diffraction, scanning electron microscopy and insulating/ferroelectric/dielectric measurements were utilised to characterise the BNFTZ thin films. Both BNFTZ thin films with the thicknesses of 160 and 320 nm are crystallised into phase-pure perovskite structure without second phase. Compared to the film of 160 nm, a lower leakage current can be obtained in BNFTZ film of 320 nm due to due to its denser microstructure with smaller grain size. The film with 320 nm thickness possesses a high energy-storage efficiency of 87%, which can be ascribed to the slimP–Eloop. At 100 kHz, the film of 320 nm owns lower dielectric constant (~91) and dissipation factor (~0.10). The possible contributions are discussed to explain the difference in the related performances for BNFTZ thin films with different thicknesses. [ABSTRACT FROM AUTHOR]