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A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications.
- Source :
-
Materials Letters . Feb2018, Vol. 213, p11-14. 4p. - Publication Year :
- 2018
-
Abstract
- The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50 % larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 213
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 127031371
- Full Text :
- https://doi.org/10.1016/j.matlet.2017.10.117