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Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells.
- Source :
-
Applied Surface Science . Mar2018, Vol. 434, p1336-1343. 8p. - Publication Year :
- 2018
-
Abstract
- Tin oxide (SnO 2 ) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO 2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO 2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO 2 (FTO) substrate and perovskite (CH 3 NH 3 PbI 3 ) layer. Thus, this SnO 2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO 2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TIN oxides
*METALLIC thin films
*PEROVSKITE
*SOLAR cells
*SEMICONDUCTOR materials
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 434
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 127034395
- Full Text :
- https://doi.org/10.1016/j.apsusc.2017.11.161