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Superlattice-like Sb-Ge thin films for high thermal stability and low power phase change memory.
- Source :
-
Journal of Alloys & Compounds . Mar2018, Vol. 738, p145-150. 6p. - Publication Year :
- 2018
-
Abstract
- The thermal properties of Sb-Ge superlattice-like thin films have been experimentally studied for phase change memory. The Sb-Ge superlattice-like thin films have a high crystallization temperature (223 °C). The interdiffusion coefficient D λ was determined by measuring the intensity of the low-angle X-ray diffraction arising from the modulation as a function of annealing time. The temperature dependence in the temperature range 80–200 °C is described by D λ = 8.3 × 10 −24 exp(-0.42 eV/kT) m 2 /s . The thermal stability of Sb-Ge superlattice-like thin films can also dramatically be improved with the increase of the temperature. The density variation of Sb-Ge superlattice-like thin films changes by only around 8% between amorphous and crystalline states, which is very important for device reliability. The threshold current and threshold voltage of a cell based on Sb-Ge are 8.15 μA, 1.07 V, respectively. The lower RESET power is presented in the PCM cells of Sb-Ge superlattice-like thin films, benefiting from its high resistivity. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 738
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 127137537
- Full Text :
- https://doi.org/10.1016/j.jallcom.2017.12.146