1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition.

We investigate the optical properties of light-emitting diodes (LEDs) operating at 1.3 μm embedding, in the intrinsic region, quantum dots (QDs) directly grown by metalorganic chemical-vapor deposition in a GaAs matrix, without indium in the barrier. The device characterization shows a full width at half maximum of the ground state emission as narrow as 24 meV at room temperature and a quenching of the emission between 30 K and room temperature as low as 2.75. Despite the low dot density (1.6×109 cm-2), the external quantum efficiency of our devices is 0.03%. This indicates that the individual QD efficiency of our devices is about 30% higher than that reported in the literature for state of the art InGaAs/InGaAs QD LEDs. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]