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Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction.
- Source :
-
Physica Status Solidi - Rapid Research Letters . Jan2018, Vol. 12 Issue 1, p1-1. 7p. - Publication Year :
- 2018
-
Abstract
- In this article, we report the growth of zinc‐tin nitride (ZnSnN2) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN2/p‐SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron‐transfer process from the ZnSnN2 layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good <italic>J–V</italic> response in the dark with a rectification ratio of 3 × 103 at 1.0 V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of ≈0.37% with an open circuit voltage of 0.25 V and a short circuit current density of 4.16 mA cm−2. The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 127287325
- Full Text :
- https://doi.org/10.1002/pssr.201700332