Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits.

MLA

Ildefonso, Adrian, et al. “Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits.” IEEE Transactions on Nuclear Science, vol. 65, no. 1, Jan. 2018, pp. 239–48. EBSCOhost, https://doi.org/10.1109/TNS.2017.2772924.

APA

Ildefonso, A., Coen, C. T., Fleetwood, Z. E., Tzintzarov, G. N., Wachter, M. T., Khachatrian, A., Mcmorrow, D., Warner, J. H., Paki, P., & Cressler, J. D. (2018). Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits. IEEE Transactions on Nuclear Science, 65(1), 239–248. https://doi.org/10.1109/TNS.2017.2772924

Chicago

Ildefonso, Adrian, Christopher T. Coen, Zachary E. Fleetwood, George N. Tzintzarov, Mason T. Wachter, Ani Khachatrian, Dale Mcmorrow, Jeffrey H. Warner, Pauline Paki, and John D. Cressler. 2018. “Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits.” IEEE Transactions on Nuclear Science 65 (1): 239–48. doi:10.1109/TNS.2017.2772924.