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Influence of N-type <bold>μ</bold>c-SiOx:H intermediate reflector and top cell material properties on the electrical performance of “micromorph” tandem solar cells.

Authors :
Chatterjee, P.
Roca I Cabarrocas, P.
Source :
AIP Advances. 2018, Vol. 8 Issue 1, p1-1. 1p.
Publication Year :
2018

Abstract

Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), &quot;micromorph&quot; tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter’s low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the &lt;italic&gt;initial&lt;/italic&gt; efficiency suffers. The advantage of such an IR is ultimately seen in the &lt;italic&gt;stabilized&lt;/italic&gt; state since the LID of a thin top cell is low. We also find that for high &lt;italic&gt;stabilized&lt;/italic&gt; efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21583226
Volume :
8
Issue :
1
Database :
Academic Search Index
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
127782021
Full Text :
https://doi.org/10.1063/1.5005114