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Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic.
- Source :
-
IEEE Transactions on Electron Devices . Nov2017, Vol. 64 Issue 11, p4759-4762. 4p. - Publication Year :
- 2017
-
Abstract
- A novel beyond-CMOS device concept, the Bilayer pseudoSpin Junction Transistor (BiSJT), is proposed. Like the previously proposed Bilayer pseudoSpin FET (BiSFET), the BiSJT is motivated by the possibility of interlayer electron-hole exciton condensation in bilayer 2-D material systems, and could provide switching energies of a few 10 s of zJ, orders of magnitude below even end-of-the-roadmap CMOS. The BiSJT is, however, current-controlled, and may allow for simpler device design, smaller device area, and more flexible gate design. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950364
- Full Text :
- https://doi.org/10.1109/TED.2017.2751560