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Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer.
- Source :
-
IEEE Transactions on Electron Devices . Dec2017, Vol. 64 Issue 12, p4868-4874. 7p. - Publication Year :
- 2017
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Abstract
- We report on the estimation of trap capture cross section in AlGaN/GaN HEMTs as a function of bias and temperature. Conductance dispersion technique was employed to study the AlGaN/GaN interface of the devices with a carbon-doped GaN buffer grown on 6-in silicon. While a negligible shift in the threshold voltage (VTH) was observed in temperature-dependent IDS-VGS sweeps, we observed a spread in the capacitance-voltage (C-V) measurements, indicating a contribution of interface traps. When biased near depletion, G/ω versus frequency plot for AlGaN/GaN interface exhibits two peaks which correspond to a pair of trap density (Dit) and trap time constant (Tit) values. This was explained using a circuit model in conjunction with energy band diagram. The Dit and Tit values for one peak were in the range from ~ 0.3-7 × 1012/eV · cm2 and 0.6-10 μs while for the other peak, Dit-Tit were in the range of ~0.1-35 × 1012/eV · cm2 and ~0.06-0.3 μs at 25 °C. From the Tit values, electron capture cross section (σ) for both the traps was extracted and was found to be decreasing with increasing temperature in the range of 1.1 × 10-20-1 × 10-19 cm2 and 4.5 × 10-20-1 × 10-17 cm2 for slow traps and fast traps, respectively. A multiphonon emission effect was invoked to explain the temperature dependence of capture cross section. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950406
- Full Text :
- https://doi.org/10.1109/TED.2017.2757516