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3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon.
- Source :
-
IEEE Transactions on Electron Devices . Dec2017, Vol. 64 Issue 12, p4952-4958. 7p. - Publication Year :
- 2017
-
Abstract
- In contrast to the conventional planar p-i-n photodiode and a metal-semiconductor-metal photodetector, the 3-D dual-gate photosensitive thin-film transistor (TFT) architectures presented here attain excellent photoresponse characteristics. Operating the device in the subthreshold regime further boosts the photoconductive gain as a result of light-induced decrease in the threshold voltage. This paper presents design considerations along with a performance comparison between 3-D photosensitive TFTs that have π- and FIN-shaped channels and conventional TFT with a planar channel. Our paper shows that the π-shaped structure tends to have a higher sensitivity while the FIN-shaped counterpart is more responsive with wider dynamic range. For both structures, a measured photoconductive gain of 104~106% is obtained with spectral responsivity ranging from near UV to near IR, and the photoresponse time in the range of tens of milliseconds. The 3-D dual-gate photosensitive TFT architecture appears to be very promising for large-area, low-level UV, visible, and IR detection applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950415
- Full Text :
- https://doi.org/10.1109/TED.2017.2760320