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Free Carrier Mobility Extraction in FETs.
- Source :
-
IEEE Transactions on Electron Devices . Dec2017, Vol. 64 Issue 12, p5279-5283. 5p. - Publication Year :
- 2017
-
Abstract
- In this paper, we propose an accurate method to extract the free carrier mobility in field effect transistors. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assessed with technology computer-aided design simulations, confirming its robustness even in the presence of short-channel effects. Exploiting the proposed model, free carrier mobility is obtained in a 28-nm commercial bulk CMOS process at room temperature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950424
- Full Text :
- https://doi.org/10.1109/TED.2017.2763998