Cite
Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.
MLA
Huang, Sen, et al. “Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.” IEEE Transactions on Electron Devices, vol. 65, no. 1, Jan. 2018, pp. 207–14. EBSCOhost, https://doi.org/10.1109/TED.2017.2773201.
APA
Huang, S., Liu, X., Wang, X., Kang, X., Zhang, J., Fan, J., Shi, J., Wei, K., Zheng, Y., Gao, H., Sun, Q., Wang, M., Shen, B., & Chen, K. J. (2018). Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices. IEEE Transactions on Electron Devices, 65(1), 207–214. https://doi.org/10.1109/TED.2017.2773201
Chicago
Huang, Sen, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Jie Fan, Jingyuan Shi, et al. 2018. “Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.” IEEE Transactions on Electron Devices 65 (1): 207–14. doi:10.1109/TED.2017.2773201.