Cite
Experimental gm/{I}{D} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET.
MLA
El Ghouli, Salim, et al. “Experimental Gm/{I}{D} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET.” IEEE Transactions on Electron Devices, vol. 65, no. 1, Jan. 2018, pp. 11–18. EBSCOhost, https://doi.org/10.1109/TED.2017.2772804.
APA
El Ghouli, S., Rideau, D., Monsieur, F., Scheer, P., Gouget, G., Juge, A., Poiroux, T., Sallese, J.-M., & Lallement, C. (2018). Experimental gm/{I}{D} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET. IEEE Transactions on Electron Devices, 65(1), 11–18. https://doi.org/10.1109/TED.2017.2772804
Chicago
El Ghouli, Salim, Denis Rideau, Frederic Monsieur, Patrick Scheer, Gilles Gouget, Andre Juge, Thierry Poiroux, Jean-Michel Sallese, and Christophe Lallement. 2018. “Experimental Gm/{I}{D} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET.” IEEE Transactions on Electron Devices 65 (1): 11–18. doi:10.1109/TED.2017.2772804.