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Electronic Conduction Mechanisms in Insulators.

Authors :
Chiang, Tsung-Han
Wager, John F.
Source :
IEEE Transactions on Electron Devices. Jan2018, Vol. 65 Issue 1, p223-230. 8p.
Publication Year :
2018

Abstract

The current density–electric field (J-\xi ) characteristics of four insulators of dramatically different electrical qualities are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and Fowler–Nordheim tunneling, whereas conduction in the two low-quality insulators involves Ohmic conduction and space-charge limited current (SCLC). Ohmic conduction and SCLC are somewhat puzzling mechanisms for contributing to insulator leakage current since they require the existence of an Ohmic contact at the cathode. Our conventional understanding of an Ohmic contact makes it difficult to ascertain how an Ohmic contact could be formed to a wide bandgap insulator. This Ohmic contact dilemma is resolved by formulating an equivalent circuit appropriate for assessing the J-\xi characteristics of an insulator and then recognizing that an insulator Ohmic contact is obtained when the injection-limited current density from the cathode electrode is greater than that of the operative bulk-limited current density, i.e., Ohmic or SCLC for the four insulators under consideration. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189383
Volume :
65
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
127950523
Full Text :
https://doi.org/10.1109/TED.2017.2776612