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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices.

Authors :
Bricalli, Alessandro
Ambrosi, Elia
Laudato, Mario
Maestro, Marcos
Rodriguez, Rosana
Ielmini, Daniele
Source :
IEEE Transactions on Electron Devices. Jan2018, Vol. 65 Issue 1, p115-121. 7p.
Publication Year :
2018

Abstract

Resistive switching memory (RRAM) is among the most mature technologies for next generation storage class memory with low power, high density, and improved performance. The biggest challenge toward industrialization of RRAM is the large variability and noise issues, causing distribution broadening which affects retention even at room temperature. Noise and variability can be addressed by enlarging the resistance window between low-resistance state and high-resistance state, which requires a proper engineering of device materials and electrodes. This paper presents an RRAM device technology based on silicon oxide (SiOx), showing high resistance window thanks to the high bandgap in the silicon oxide. Endurance, retention, and variability show excellent performance, thus supporting SiOx as a strong active material for developing future generation RRAMs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
65
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
127950531
Full Text :
https://doi.org/10.1109/TED.2017.2777986