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Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules.
- Source :
-
IEEE Transactions on Industrial Electronics . Jun2018, Vol. 65 Issue 6, p4724-4738. 15p. - Publication Year :
- 2018
-
Abstract
- This paper proposes the adoption of the inherent emitter stray inductance $L_{{\rm{eE}}}$ in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 02780046
- Volume :
- 65
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industrial Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 128054536
- Full Text :
- https://doi.org/10.1109/TIE.2017.2745442