Interface composition and electronic properties of chromium (III, IV) oxides junctions

Air oxidation of chromium films is investigated as an alternative technique for making chromium (III, IV) oxides junctions, of interest for magnetoelectronics applications. Characterization of the surface by angle-resolved X-ray photoemission spectroscopy (ARXPS) shows that a surface layer of insulating Cr2O3 is covering metallic CrO2. The phase separation of the two types of oxides is more pronounced after increased oxidation. Low-temperature electric transport curve confirms the zero-bias anomaly observed in the past on oxidized chromium junctions. [Copyright &y& Elsevier]