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Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor.
- Source :
-
Applied Physics Letters . 4/19/2004, Vol. 84 Issue 16, p3178-3180. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2004
-
Abstract
- We report Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect transistors. Degenerately p+-doped channel and n+-doped source/drain enables band-to-band tunneling, which can play a major role in the transport between the channel and source/drain. The formation of tunnel barriers and a quantum dot in a single-electron transistor structure originates from two p+–n+ tunnel junctions and a p+-doped channel with mesoscopic dimension, respectively. Coulomb-blockade oscillations with multiple peaks were clearly observed at liquid nitrogen temperature. Using the electrical and thermal characterization of the quantum dot, single-electron charging effect based on band-to-band tunneling is confirmed. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 84
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 12817049
- Full Text :
- https://doi.org/10.1063/1.1707217