Tunable Schottky barrier and electronic properties in borophene/g-C2N van der Waals heterostructures.

By stacking different layers of two dimensional (2D) monolayer materials, the electronic properties of the 2D van der Waals (vdW) heterostructures can be tailored. However, the Schottky barrier formed between 2D semiconductor and metallic electrode has greatly limited the application of 2D semiconductor in nanoelectronic and optoelectronic devices. Herewith, we investigate the electronic properties of borophene/g-C 2 N vdW heterostructures by first-principles calculations. The results indicate that electronic structures of borophene and g-C 2 N are preserved in borophene/g-C 2 N vdW heterostructures. Meanwhile, upon the external electric field, a transition from the n -type Schottky contact to Ohmic contact is induced, and the carrier concentration between the borophene and g-C 2 N interfaces can be tuned. These results are expected to provide useful insight in the nanoelectronic and optoelectronic devices based on the borophene/g-C 2 N vdW heterostructures. [ABSTRACT FROM AUTHOR]