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Wavelength extension in GaSbBi quantum wells using delta-doping.
- Source :
-
Journal of Alloys & Compounds . May2018, Vol. 744, p667-671. 5p. - Publication Year :
- 2018
-
Abstract
- Delta doped GaSbBi quantum wells (QWs) grown by molecular beam epitaxy was investigated to extend light emission wavelength at room temperature with the Bi content of 7.0%. The delta-doped GaSbBi QWs transition energy shifts up to 47.0 meV with increasing the Te dopant concentration from 0 to 4.56 × 10 12 cm −2 , resulting in maximum light emission of 2.42 μm, without obvious degradation of optical quality. The temperature coefficient of the band-gap for the delta-doped QW is only 0.099 meV/K compared with 0.265 meV/K from the undoped GaSbBi reference QW. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*PHOTON emission
*BAND gaps
*MOLECULAR beam epitaxy
*WAVELENGTHS
Subjects
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 744
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 128275817
- Full Text :
- https://doi.org/10.1016/j.jallcom.2018.02.027