Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance.

Introduction of new conduction mechanism called junctionless in MOSFETs takes us to another direction in device fabrication. Moving from inversion to junctionless devices in nanoscale regime proves a good alternative for low-power applications and overcomes the barrier of lightly doped channels. 6T-SRAM circuits, the first to arrive in the market long ago, still occupy its area in modern-day ICs too. In this work, four topologies of 6T-SRAM namely Flex-V th , Flex-PG, PG-SN, and FinFETs are generated based on inversion type independent double-gate as well as common double-gate devices. For the first time, the same four topologies are also generated using junctionless devices. In nanoscale range, the reliability of circuits is given paramount importance since they are easily affected by radiation. This 6T-SRAM's radiation sensitivity is studied and from our simulation results, the common double-gate based 6T-SRAM shows good performance over the independent double-gate based 6T-SRAM in both inversion and junctionless type. [ABSTRACT FROM AUTHOR]