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High-performance organic transistors based on solution-processed rubrene crystals directly grown on a polymeric dielectric.
- Source :
-
Organic Electronics . May2018, Vol. 56, p76-81. 6p. - Publication Year :
- 2018
-
Abstract
- High-quality rubrene crystals were directly grown on a polymeric gate dielectric-coated ITO/glass substrate by a simple solution process. Organic field-effect transistors were fabricated based on these rubrene crystals, and their electrical performance was investigated. Atomic force micrographs of the rubrene crystal reveal that its surface has a conventional terrace structure, confirming the well-ordered rubrene molecules. The organic transistor with the rubrene crystal shows the highest charge carrier hole mobility of 3.74 cm 2 /V·s that can be attributed to the strong π-π overlap between the adjacent rubrene molecules. The device shows a stable static and dynamic electrical stress response under ambient conditions. For evaluating the applicability of the transistor in a logic circuit, a simple load-type inverter is fabricated by combining the rubrene transistor and a 10 MΩ load-resistor, to achieve a clear dynamic switching response up to 100 Hz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15661199
- Volume :
- 56
- Database :
- Academic Search Index
- Journal :
- Organic Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 128589165
- Full Text :
- https://doi.org/10.1016/j.orgel.2018.01.042