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Active Junction Temperature Control of IGBT Based on Adjusting the Turn-off Trajectory.

Authors :
Wang, Bo
Zhou, Luowei
Zhang, Yi
Wang, Kaihong
Du, Xiong
Sun, Pengju
Source :
IEEE Transactions on Power Electronics. Jul2018, Vol. 33 Issue 7, p5811-5823. 13p.
Publication Year :
2018

Abstract

The junction temperature fluctuation of an insulated-gate bipolar transistor (IGBT) is the most important factor of its aging failure, and smoothing the fluctuation is an effective way to improve the life of an IGBT. The existing methods for smoothing the fluctuation by active junction temperature control are not yet ready wide application, and exploring the different approaches to active junction temperature control is a hot topic. This paper presents a method of active junction temperature control that shifts the turn-off trajectory of an IGBT to adjust the IGBT turn-off loss for smoothing the junction temperature. The relationship between parameters of the adjusting circuit and turn-off loss is analyzed. On the basis of this analysis, a method of estimating the smoothing ability for the proposed active junction temperature control is deduced. Using an IGBT installed in a 1.2-MW direct-drive wind power converter as an example, the evaluation result shows that the proposed method can completely smooth the junction temperature fluctuation caused by a 40% rated load fluctuation. Finally, a low-power experiment is carried out. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
08858993
Volume :
33
Issue :
7
Database :
Academic Search Index
Journal :
IEEE Transactions on Power Electronics
Publication Type :
Academic Journal
Accession number :
128664854
Full Text :
https://doi.org/10.1109/TPEL.2017.2749383