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Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Apr2018, Vol. 65 Issue 4, p1504-1610. 7p. - Publication Year :
- 2018
-
Abstract
- Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS2 channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 128698533
- Full Text :
- https://doi.org/10.1109/TED.2018.2805716