Cite
Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors.
MLA
Doohyeok Lim, et al. “Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors.” IEEE Transactions on Electron Devices, vol. 65, no. 4, Apr. 2018, pp. 1578–82. EBSCOhost, https://doi.org/10.1109/TED.2018.2802492.
APA
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, & Sangsig Kim. (2018). Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors. IEEE Transactions on Electron Devices, 65(4), 1578–1582. https://doi.org/10.1109/TED.2018.2802492
Chicago
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, and Sangsig Kim. 2018. “Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors.” IEEE Transactions on Electron Devices 65 (4): 1578–82. doi:10.1109/TED.2018.2802492.