Back to Search
Start Over
Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer.
- Source :
-
IEEE Transactions on Electron Devices . Feb2018, Vol. 65 Issue 2, p537-541. 5p. - Publication Year :
- 2018
-
Abstract
- Although oxide thin-film transistors (TFTs) have drawn great interests in flexible displays, a key obstacle is the requirement of high-temperature annealing to realized mobility >10 cm²/V · s. In this paper, a fully room-temperature strategy, involving the deposition of ~10 nm In-Ga-Zn-O (IGZO) channel layer and ~4 nmAl2O3 passivation layer, is introduced. The as-prepared flexible TFT on polymide substrate exhibits a saturation mobility of 15.3 cm²/V · s, Vth of 3.08 V, and on/off current ratio of 2.3 x 107. Thickness-dependent analysis indicates that the interface between Al2O3 and IGZO is composed of negative O-rich layer, which impel the energy band bending inside the IGZO layers and release of electrons from traps. This paper opens up a route to achieve fully room-temperature fabrication of high-performance flexible TFT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 128703196
- Full Text :
- https://doi.org/10.1109/TED.2017.2786473