Cite
Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature.
MLA
Kumar, Ajay, et al. “Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature.” IEEE Transactions on Electron Devices, vol. 65, no. 3, Mar. 2018, pp. 860–66. EBSCOhost, https://doi.org/10.1109/TED.2018.2793853.
APA
Kumar, A., Tripathi, M. M., & Chaujar, R. (2018). Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature. IEEE Transactions on Electron Devices, 65(3), 860–866. https://doi.org/10.1109/TED.2018.2793853
Chicago
Kumar, Ajay, M. M. Tripathi, and Rishu Chaujar. 2018. “Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature.” IEEE Transactions on Electron Devices 65 (3): 860–66. doi:10.1109/TED.2018.2793853.