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Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry.
- Source :
-
Journal of Magnetism & Magnetic Materials . Apr2018, Vol. 451, p487-492. 6p. - Publication Year :
- 2018
-
Abstract
- The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd 2 O 3 , on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03048853
- Volume :
- 451
- Database :
- Academic Search Index
- Journal :
- Journal of Magnetism & Magnetic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 128718480
- Full Text :
- https://doi.org/10.1016/j.jmmm.2017.11.065