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Unexpected metal-insulator transition in thick Ca1-<italic>x</italic>Sr<italic>x</italic>VO3 film on SrTiO3 (100) single crystal.
- Source :
-
Applied Physics Letters . 3/26/2018, Vol. 112 Issue 13, p1-1. 1p. 2 Charts, 4 Graphs. - Publication Year :
- 2018
-
Abstract
- Epitaxial Ca1-<italic>x</italic>Sr<italic>x</italic>VO3 (0 ≦ <italic>x</italic> ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-<italic>x</italic>Sr<italic>x</italic>VO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2<italic>p</italic>3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 112
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 128785987
- Full Text :
- https://doi.org/10.1063/1.5021618