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Exploring window buffer layer technology to enhance CdTe solar cell performance.
- Source :
-
Solar Energy . Apr2018, Vol. 164, p180-186. 7p. - Publication Year :
- 2018
-
Abstract
- The short-wavelength response for traditional CdS/CdTe thin film solar cells was dramatically restricted by the CdS window layer. In order to increase short-wavelength light collection, we tried to replace CdS with Mg x Zn 1−x O (MZO). The short-wavelength quantum efficiency ( QE ) response was obviously increased to more than 80% at 400 nm, while fill factor (FF) and open circuit voltage ( V oc ) for CdTe solar cells were decreased. This decrease was mainly caused by the weak build-in potential formed by the MZO/CdTe heterojunction, which resulted in insufficient driving force to repel the photo-generated carriers. Hence, the thin CdS buffer layer was introduced between MZO and CdTe to improve the built-in potential. It efficiently increased the build-in potential from 0.369 to 0.579 V with an obvious improvement of FF and V oc . But this interlayer caused QE losses to some degree in the short-wavelength region. To avoid these losses, a composite CdS/CdSe buffer layer was incorporated in the CdTe solar cells. CdSe acted as a protective layer to avoid the excessive CdS consumption during the high temperature deposition processing of the CdTe absorption layer. Meanwhile the formation of CdSe x Te 1−x by inter-diffusion extended the long-wavelength response. Thus, cell performance was enhanced with a relatively high build-in potential 0.517 V and a substantial improvement of the QE response. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0038092X
- Volume :
- 164
- Database :
- Academic Search Index
- Journal :
- Solar Energy
- Publication Type :
- Academic Journal
- Accession number :
- 128804848
- Full Text :
- https://doi.org/10.1016/j.solener.2018.02.044