Cite
Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors.
MLA
Pucicki, D. “Inhomogeneous GaInNAs Quantum Wells: Their Properties and Utilization for Improving of p-i-n and p-n Junction Photodetectors.” Materials Science-Poland, vol. 35, no. 4, Dec. 2017, pp. 893–902. EBSCOhost, https://doi.org/10.1515/msp-2017-0110.
APA
Pucicki, D. (2017). Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors. Materials Science-Poland, 35(4), 893–902. https://doi.org/10.1515/msp-2017-0110
Chicago
Pucicki, D. 2017. “Inhomogeneous GaInNAs Quantum Wells: Their Properties and Utilization for Improving of p-i-n and p-n Junction Photodetectors.” Materials Science-Poland 35 (4): 893–902. doi:10.1515/msp-2017-0110.