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Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
- Source :
-
Semiconductors . May2018, Vol. 52 Issue 5, p602-604. 3p. - Publication Year :
- 2018
-
Abstract
- The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 52
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 129132216
- Full Text :
- https://doi.org/10.1134/S1063782618050299