Relaxation of residual microstress in reaction bonded silicon carbide.

High temperature annealing reduces the residual microstress in the silicon phase and silicon carbide phase in monolithic reaction bonded silicon carbide and in the matrix of melt-infitrated composites of silicon carbide reinforced with silicon carbide fibers. Stress relaxation is related to creep of the silicon carbide with power-law creep exponents similar to tensile creep in reaction bonded silicon carbide. [ABSTRACT FROM AUTHOR]