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Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework.
- Source :
-
IEEE Transactions on Magnetics . May2018, Vol. 54 Issue 5, p1-10. 10p. - Publication Year :
- 2018
-
Abstract
- The realistic modeling of spin-transfer torque (STT)-magnetoresistive random access memory (MRAM) for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments requires a full description of stochastic switching processes in the state-of-the-art STT-MRAMs. Here, we compare micromagnetic simulations with an analytical formulation that takes into account the spin-torque asymmetry of the spin-polarization function by considering the mean, standard deviation, skewness, and kurtosis. We find that, while the first and second statistical moments exhibit a very similar behavior, skewness and kurtosis are substantially different and must be taken into account in order to provide an accurate prediction of the switching performance. In fact, a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main achievements of this paper underline the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 54
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 129265884
- Full Text :
- https://doi.org/10.1109/TMAG.2018.2799856