Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer.

Cupric oxide (CuO) is synthesized by simple chemical bath deposition method and deposited on n-type InP substrate using e-beam evaporation technique. First, the structural and chemical compositional analysis of CuO/n-InP are analysed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRD and XPS results confirmed that the formation of CuO on n-type InP substrate. Then, Au/CuO/n-InP heterojunction is fabricated with a CuO interlayer and correlated its results with the Au/n-InP Schottky junction (SJ). The barrier height (Φ b ) and ideality factor (n) are extracted through I-V and C-V methods and the respective values are 0.66 eV (I-V)/0.80 eV (C-V) and 1.24, and 0.78 eV (I-V)/0.94 eV (C-V) and 1.62 for the SJ and HJ diodes, respectively. By applying Cheung's and Norde functions, the Φ b , ideality factor and series resistance (R S ) are derived for the SJ and HJ diodes. The derived interface state density (N SS ) of HJ is lower than the SJ; results demonstrated that the CuO interlayer plays an important role in the decreased N SS . The Poole-Frenkel emission is the dominant current conduction mechanism in reverse bias of both SJ and HJ diodes. [ABSTRACT FROM AUTHOR]