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Anti-site defected MoS2 sheet-based single electron transistor as a gas sensor.

Authors :
Sharma, Archana
Husain, Mushahid
Srivastava, Anurag
Khan, Mohd. Shahid
Shekhawat, Manoj Singh
Bhardwaj, Sudhir
Suthar, Bhuvneshwer
Source :
AIP Conference Proceedings. 2018, Vol. 1953 Issue 1, pN.PAG-N.PAG. 4p.
Publication Year :
2018

Abstract

To prevent harmful and poisonous CO gas molecules, catalysts are needed for converting them into benign substances. Density functional theory (DFT) calculations have been used to study the adsorption of CO and CO2 gas molecules on the surface of MoS2 monolayer with Mo atom embedded at S-vacancy site (MoS). The strong interaction between Mo metal with pristine MoS2 sheet suggests its strong binding nature. Doping Mo into MoS2 sheet enhances CO and CO2 adsorption strength. The sensing response of MoS-doped MoS2 system to CO and CO2 gas molecules is obtained in the single electron transistor (SET) environment by varying bias voltage. Doping reduces charging energy of the device which results in fast switching of the device from OFF to ON state. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
1953
Issue :
1
Database :
Academic Search Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
129585392
Full Text :
https://doi.org/10.1063/1.5033250