Cite
New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications.
MLA
Razavi, S. M., et al. “New GaN Based HEMT with Si3N4 or Un-Doped Region in the Barrier for High Power Applications.” Superlattices & Microstructures, vol. 118, June 2018, pp. 221–29. EBSCOhost, https://doi.org/10.1016/j.spmi.2018.04.019.
APA
Razavi, S. M., Tahmasb Pour, S., & Najari, P. (2018). New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications. Superlattices & Microstructures, 118, 221–229. https://doi.org/10.1016/j.spmi.2018.04.019
Chicago
Razavi, S.M., S. Tahmasb Pour, and P. Najari. 2018. “New GaN Based HEMT with Si3N4 or Un-Doped Region in the Barrier for High Power Applications.” Superlattices & Microstructures 118 (June): 221–29. doi:10.1016/j.spmi.2018.04.019.