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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111).
- Source :
-
Chinese Physics Letters . May2018, Vol. 35 Issue 5, p1-1. 1p. - Publication Year :
- 2018
-
Abstract
- A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTROLUMINESCENCE
*GALLIUM nitride
*SUPERLATTICES
*LIGHT emitting diodes
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 35
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 129706816
- Full Text :
- https://doi.org/10.1088/0256-307X/35/5/057303