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Design, Properties, and TFT Application of Solution-Processed In-Ga-Cd-O Thin Films.
- Source :
-
Physica Status Solidi - Rapid Research Letters . May2018, Vol. 12 Issue 5, p1-N.PAG. 7p. - Publication Year :
- 2018
-
Abstract
- Concerning the revolutionary future of electronic devices, high-performance solution-processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In-Ga-Cd-O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide thin films with small surface roughness have been grown by controlling the relative ratio of Cd-content. The present thin-film transistor with an optimized Cd-ratio exhibits a saturation field-effect mobility up to 10 cm² V-1 s-1, an on/off current ratio of ≈1.3×109, and a threshold voltage shift of ≈2.6 V under -5 V gate bias of 10 000 s, which are superior or comparable to those reported values of solution-processed conventional In-Ga-Zn-O counterparts. Our results indicate that the proposed In-Ga-Cd-O semiconductor would endow a promising transparent amorphous/nanocrystalline active material for electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 12
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 129782288
- Full Text :
- https://doi.org/10.1002/pssr.201800034