High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis.

A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min −1 . This method provides a simple and alternative way for diamond processing and patterning. [ABSTRACT FROM AUTHOR]