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High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis.

Authors :
Liu, Kang
Lv, Zhijun
Dai, Bing
Shu, Guoyang
Zhao, Jiwen
Liu, Benjian
Wang, Weihua
Xue, Jingjing
Yao, Kaili
Sun, Mingqi
Gao, Ge
Wang, Yang
Zhu, Jiaqi
Source :
Diamond & Related Materials. Jun2018, Vol. 86, p186-192. 7p.
Publication Year :
2018

Abstract

A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min −1 . This method provides a simple and alternative way for diamond processing and patterning. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09259635
Volume :
86
Database :
Academic Search Index
Journal :
Diamond & Related Materials
Publication Type :
Academic Journal
Accession number :
129846583
Full Text :
https://doi.org/10.1016/j.diamond.2018.04.026