Cite
Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing.
MLA
Kim, Taeho, and Sanghun Jeon. “Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing.” IEEE Transactions on Electron Devices, vol. 65, no. 5, May 2018, pp. 1771–73. EBSCOhost, https://doi.org/10.1109/TED.2018.2816968.
APA
Kim, T., & Jeon, S. (2018). Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing. IEEE Transactions on Electron Devices, 65(5), 1771–1773. https://doi.org/10.1109/TED.2018.2816968
Chicago
Kim, Taeho, and Sanghun Jeon. 2018. “Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing.” IEEE Transactions on Electron Devices 65 (5): 1771–73. doi:10.1109/TED.2018.2816968.