Enhanced NO2 Sensing Property of ZnO by Ga Doping and H2 Activation.

Ga‐doped ZnO nanoparticles are successfully prepared by a facile coprecipitation method and then are activated by H2 annealing. The as‐prepared ZnO powders are characterized by X‐ray diffractometer (XRD), Brunauer–Emmett–Teller (BET), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X‐ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies. Gas sensing property using NO2 as probe shows that the 1 at.% Ga‐ZnO powders activated in H2 at 540 °C showed high NO2 response of ≈50/ppm, high selectivity toward typical interferences such as ethanol, acetone, toluene, NO, SO2, C2H6, and C2H4 and high stability as measured at 200 °C. On the contrary, the pure ZnO and the Ga‐ZnO without H2 activation show far lower response, which illustrates the effect of Ga dopant activation by H2 annealing aimed for the high performance gas sensing materials. [ABSTRACT FROM AUTHOR]