Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation.

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (<italic>C-V</italic>) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10–2.53 <italic>μ</italic>s to 3.46–37 <italic>μ</italic>s after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011–1.70 × 1013 cm−2·eV−1 to 1.8 × 1012–1.8 × 1013 cm−2·eV−1 with an increase in trap activation energy from 0.34 eV–0.32 eV to 0.41 eV–0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper. [ABSTRACT FROM AUTHOR]