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Lattice damage produced in GaN by swift heavy ions.

Authors :
Kucheyev, S.O.
Timmers, H.
Zhou, J.
Williams, J.S.
Jagadish, C.
Li, G.
Source :
Journal of Applied Physics. 5/15/2004, Vol. 95 Issue 10, p5360-5365. 6p. 2 Black and White Photographs, 2 Graphs.
Publication Year :
2004

Abstract

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197 Au 16+ ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire∼ 1.5-µ m-thick GaN film. These tracks,∼ 100Å in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to∼ 10 13 cm-2. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
95
Issue :
10
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
13029383
Full Text :
https://doi.org/10.1063/1.1703826