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Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films.

Authors :
Sreekantha Reddy Dugasani
Bjorn Paulson
Taewoo Ha
Tae Soo Jung
Bramaramba Gnapareddy
Jang Ah Kim
Taesung Kim
Hyun Jae Kim
Jae Hoon Kim
Kyunghwan Oh
Sung Ha Park
Source :
Journal of Physics D: Applied Physics. 7/18/2018, Vol. 51 Issue 28, p1-1. 1p.
Publication Year :
2018

Abstract

DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current–voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film’s physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
51
Issue :
28
Database :
Academic Search Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
130380508
Full Text :
https://doi.org/10.1088/1361-6463/aaca63