Dependence of Ce3+ - related photo- and thermally stimulated luminescence characteristics on Mg2+ content in single crystals and epitaxial films of Gd3(Ga,Al)5O12:Ce,Mg.

Photoluminescence and thermally stimulated luminescence of Gd 3 (Ga,Al) 5 O 12 :Ce single crystals and epitaxial films co-doped with different concentrations of Mg 2+ ions are investigated in the 77–500 K temperature range under excitation in the 4f - 5d 1 and 4f - 5d 2 absorption bands of Ce 3+ ions. Influence of Mg 2+ ions on the photoluminescence intensity, spectrum, decay kinetics, temperature dependence of the photoluminescence intensity, and the activation energy of luminescence thermal quenching is observed. Co-doping with Mg 2+ is shown to result in a drastic reduction of the afterglow and thermally stimulated luminescence and in a strong shortening of the afterglow decay kinetics. It influences also defects creation spectra and the activation energy of the photostimulated defects creation. The Mg 2+ - induced changes in the characteristics of the Gd 3 (Ga,Al) 5 O 12 :Ce, Mg single crystals and epitaxial films are found to be strongly different, and possible reasons of these differences are discussed. [ABSTRACT FROM AUTHOR]